Effect of Carbon Concentration and Growth Conditions on Oxygen Precipitation Behavior in n-type Cz-Si

Abstract

The behavior of oxygen precipitates under solar cell fabrication processes and the effect on device performance were investigated using TEM observation. Samples were prepared with different carbon concentration and with two sets of growth conditions. The number of precipitates correlates monotonically with the carbon concentration. When the initial carbon concentration is high, the cell efficiency is improved by decreasing the carbon concentration. When the initial carbon concentration is reduced to smaller than 1016 cm−3, the oxygen precipitate grows largely and introduces dislocation. Precipitates grown in a plate form introduce dislocations to the surroundings at a high density, while dislocation density is relatively small around the precipitates polyhedral-grown on the basis of an octahedron. Under the growth conditions for introducing a plate-like precipitate, the cell efficiency was not improved even if the carbon concentration was reduced.