Abstract
A modified two-step carbonization process was used to growth high oriented 3C-SiC films on Si(100) substrates by using SiH4 and C3H8 as precursors. The investigation revealed that the C/Si Moore ratio has important influences on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si(100) were evaluated by Microscopy and SEM. This indicates that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si(100) was grown with a 1.6 C/Si ratio at 1385 °C for 1hr. The surface roughness was 3.6nm.DOI: http://dx.doi.org/10.5755/j01.ms.23.3.16323
Highlights
Silicon carbide (SiC) crystal materials have been attended to the superior wide band material
Through changing the C/Si Moore ratios in the growth procedure from 0.8 – 3.0, the effect of C/Si Moore ratios on the surface quality and crystallinity of 3C-SiC films grown on the Si (100) substrates were studied by the modified two-step carbonization method
As the C/Si Moore ratio increased, the surface morphology of 3C-SiC films changed to smooth mosaic-like surface from rough grainlike surface, significantly
Summary
Silicon carbide (SiC) crystal materials have been attended to the superior wide band material. Cubic silicon carbide (3C-SiC), as the common polytype of numerous SiC polytypes, can been grown on Si single crystal wafer even there is a big lattice mismatch. It can be applied in a wide range of fields, because of its lower cost, lower lattice mismatch with nitrides and graphene [1, 2]. [6, 7], the thickness, surface morphology, off-cut angle, curvature magnitude, and shape of 3C-SiC/Si template will affect the strain relaxation and dislocation density reduction in the GaN layer which grown on the 3C-SiC/Si substrate. The growth temperature has direct effect on the surface, the crystalline quality and the curvature of 3C-SiC films. The crystalline quality and surface morphology of 3C-SiC films. 3C-SiC films grow on Si (100) substrates via a modified two-step carbonization method and the effects of C/Si Moore ratio on the structure and morphology of 3C-SiC films were studied
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
