Abstract
The Effects of the bottom polysilicon doping on the reliability of polyoxides grown using electron cyclotron resonance (ECR) N2O-plasma have been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). In situ doped polysilicon films have a smooth surface. ECR N2O-plasma polyoxide on in situ doped polysilicon has a lower leakage current and a higher breakdown field, furthermore, a lower electron trapping rate and a larger charge-to-breakdown (Qbd) up to 10 C/cm2, which is comparable to the electrical properties of ONO IPD. This is mainly attributed not only to a nitrogen-rich layer with strong Si–N bonds but also to a smooth interface. We conclude that ECR N2O-plasma polyoxide on in situ doped polysilicon is a good candidate for an interpoly dielectric of future high density NVMs.
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