Abstract
A series of CdS/Si nanoheterostructures were prepared by growing boron-doped CdS thin films on silicon nanoporous pillar array (Si-NPA). The structural, photoluminescence (PL) and electroluminescence (EL) properties of CdS/Si-NPA were studied as a function of [B]/[Cd] ratio. Our results disclosed that their emission intensity and wavelength can be tuned by boron-doping concentration. These results indicated that B-doped CdS/Si-NPA nanoheterostructure would be a prospective system in constructing Si based optoelectronic devices.
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