Abstract
The effects of boron doping on an i-layer of the p-i-n basis junction structure type amorphous silicon solar cells have been systematically studied. It has been shown from the experiments that a-Si:H film doped with about 1 × 10 17 atoms / cm 3 of boron shows an intrinsic property. The ITO/n-i-p/ss, ITO/p-i-n/ss and glass/ITO/p-i-n/metal cells with such intrinsic i-layer show much better photovoltaic performance than the cells with undoped i-layer. The role of boron in the i-layer in producing an efficient photovoltaic process is also discussed together with the improvement of drift length of the photogenerated carrier in the cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
