Abstract
The photosensitivity dynamics in SiO 2 glass with a composition similar to that of silica planar lightwave circuit (PLC) devices was investigated as a fundamental study prior to device fabrication. Silica bulk glasses with similar composition to the core layer of PLC devices were prepared with various concentrations of B 2O 3. The photosensitivity in boron and germanium co-doped amorphous SiO 2 yields a refractive index change Δ n as high as 10 −3 after irradiation with a KrF UV laser beam. The index modulation disappeared after thermal annealing. The result of annealing experiment and UV absorption/Raman spectra revealed that the molar volume change by UV irradiation is responsible for the index variation in the material.
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