Abstract
With boron carbide (B4C) as sintering additives, silicon carbide (SiC) ceramics were prepared in 2100°C by solid-phase sintering under argon atmosphere. The change of microstructure, phase composition and density for all sintered samples were studied. The results showed that with the increase of B4C addition, the density of SiC ceramic was significantly increasing between 0-4 wt% of B4C addition and slightly increasing between 4-8 wt%. XRD analysis showed that all the ceramics without B4C were SiC-6H crystal, while those with B4C contained SiC-4H crystal, B4C turned SiC-6H to SiC-4H, and the more B4C added, the more change it made. SiC ceramic particles changed from equiaxial shape without B4C to flake shape with B4C added, and the particle sizes increased significantly with the amount of B4C additive.
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