Abstract
Bismuth lanthanum titanate (BLT) thin films with excess Bi contents were prepared onto a Pt/Ti/SiO 2/Si substrate by a metalorganic decomposition technique (MOD). The effect of Bi excess on the microstructure and ferroelectric properties was investigated. When a 10% of Bi excess was added, the BLT thin films showed a polycrystalline structure. The remanent polarization and dielectric constant decreased with more than 10% of Bi excess. Bi deficiency or Bi excess over 10% in the BLT films resulted in poor fatigue properties. This was attributed to the structure defects and a presence of a secondary phase, which coexists with a layered perovskite phase. The BLT thin films with 10% of Bi excess have the remanent polarization (2 P r) value of 25.66 μC/cm 2 and a coercive field of 84.75 kV/cm. The BLT thin films with 10% of Bi excess showed no fatigue even after 1 × 10 9 bipolar switching cycles.
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