Abstract
The response of metal-oxide-semiconductor (MOS) transistors and capacitors to high-energy Co-60 gamma and low-energy x-ray irradiation is evaluated as a function of gate bias during exposure. It is demonstrated that, in contrast to previous expectations, the relative response of MOS devices to Co-60 gamma and 10 keV x-ray irradiation cannot be explained simply in terms of electron-hole recombination and dose enhancement effects.
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