Effect of band-gap tuning on lead-free double perovskite heterostructure devices for photovoltaic applications via SCAPS simulation

Abstract

In the present study, the effect of band-gap tuning and temperature on different double perovskites, A2NiMnO6 (A = La, Eu and Dy) as an absorbing layer in the perovskite solar cell (PSC) heterostructure devices were investigated via SCAPS simulation approach. We have optimized the hetrostructures and achieved the maximum power conversion efficiency (PCE)∼9.68 %, 9.41 % and 8.97 % for La2NiMnO6 (LNMO), Eu2NiMnO6 (ENMO) and Dy2NiMnO6 (DNMO) at their optimum band-gap values∼1.5 eV, 1.625 eV and 1.625 eV, respectively. It is observed that the moderate band-gap i.e. 1.4–1.7 eV and low temperature ∼250 K are extremely favorable for the improvement in PCE of the devices. The heterostructure device of LNMO shows the better device functionalities at optimum conditions in comparison to others. It is believed that if we would be able to get these tuned band-gaps in the laboratory then these tuned band-gap materials may be used as potential candidates for highly efficient absorbing materials in PSC applications.