Abstract
B2O3 was added to Bi4(SiO4)3 ceramics to aid the densification process at low temperatures (≤900°C). When the B2O3 content was <3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3-added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of ɛr=15.6, Q×f=36 281 GHz, and τf=−22 ppm/°C.
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