Abstract
The effects of atomic hydrogen irradiation in low-temperature GaAs on Si heteroepitaxy have been investigated by reflection high-energy electron diffraction (RHEED) and secondary ion mass spectrometry (SIMS). During the initial stage of GaAs on Si heteroepitaxy at 200°C, atomic H was found to play a crucial role, such as the enhancement of two-dimensional (2D) growth and increase of the critical thickness. For the low-temperature grown films of GaAs on Si with atomic H irradiation, it has been observed high concentrations of H in the vicinity of GaAs/Si interface and GaAs films were present.
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