Abstract
We investigated the effects of atomic hydrogen (H*) irradiation on native oxides of InN films by X-ray photoelectron spectroscopy, mass spectrometry, low-energy electron diffraction (LEED) and scanning electron microscopy. After H* irradiation, it was found that the higher-binding-energy side of the In4d peak drastically decreased and a clear (1×1) LEED pattern was observed. From these results, it is considered that H* irradiation is effective to remove native oxides on InN films with only small surface damage.
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