Abstract
An asymmetric Schottky barrier metal-semiconductor-metal (MSM) ultraviolet (UV) detector with Ni/GaN/Au structure was designed and the effect of the asymmetric Schottky barrier on the detector response was investigated. This detector had response at 0 V bias and increased responsivity when a positive bias was applied to the Ni/GaN contact; however, the internal gain disappeared when a negative bias was applied to this point. This contrasts with a symmetric Ni/GaN/Ni Schottky barrier MSM UV detector which had no internal gain under positive/negative bias and almost no response at 0 V bias. The improved performance of the asymmetric Schottky barrier detector was because of the lower work function of Au causing reduction of Schottky barrier and hence enhancing a hole-accumulating and trapping process, which resulted in internal gain.
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