Abstract
InAs/InAlAs/InP(001) nanostructure materials are grown using solid-source molecular beam epitaxy equipment. Effect of As pressure-modulated InAlAs superlattice on the morphology of InAs nanostructure is investigated. The results show that As pressure-modulated InAlAs superlattice can suppress the quantum wires formation and results in quantum dot growth with a uniform size distribution. The analysis indicates that the morphology of InAs nanostructure is caused mainly by the anisotropic strain relaxation of InAlAs layers and the anisotropic surface migration of In adatoms.
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