Abstract
ABSTRACTThe effect of arsenic on {311} defect formation was determined for temperatures ranging from 700°C to 800°C. Arsenic well structures were formed at arsenic concentrations of 3×1017, 3×1018, and 3×1019 cm−3. A 40 keV 1×1014 cm−2 silicon implant, that is known to form {311} defects, was then incorporated into the structures. Extended defect evolution and dissolution was then studied after furnace annealing at 700°C, 750°C and 800°C for various times. It was determined that arsenic has a strong affect on the nucleation of extended defects. However, once the defects were formed, the dissolution time constant was the same for all concentrations considered. The activation energy for defect dissolution was found to be 3.4eV and was also independent of arsenic concentration. Using a newly developed {311} model in the FLOOPS process simulation software, the effect of the arsenic on {311} formation and dissolution was simulated. It was found that by using a pair model with an arsenic-interstitial binding energy of 0.95eV, the experimental results were able to be simulated.
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