Effect of Ar+ Ion Implantation-Induced Microstructural Modifications on Electrical Conductivity of Glass RPC Detector Materials

Abstract

Argon ions with energy of 1 MeV and 500 keV are implanted at various fluences into Asahi and Saint Gobain clear float glasses used for resistive plate chamber (RPC) detector fabrication. The decreased size of voids (Vf) in the selected glasses is interpreted as an increased short-range order of the glass structure at higher fluence of argon ion implantation. The increased local temperature influences the diffusion of argon ions via trapping in the silica glass voids for higher implantation fluence. The slight increase in bandgap energy (Eg) in the glass RPC detector materials at higher argon ion implantation fluence observed reduced electrical conductivity. The increased energy bandgap in the float glass RPC detector samples enhanced surface resistivity, consequently reducing the leakage current.