Abstract
A systematic study of the effect of Ar-gas-pressure (PAr) in Co–Si–O granular film by sputter deposition using sintered targets is carried out for applications in CoPtCr–SiO2 perpendicular media. Detailed analyses of composition, phase formation and microstructure of granular films revealed that: (1) Co–Si–O granular films with similar compositions could be prepared by different sintered targets, (Co)+(SiO2), (Co)+(CoSi)+(CoO), (Co)+(Si)+(CoO), and (Co)+(Si)+(Co3O4), (2) oxygen content in film increases with increasing PAr, (3) oxygen content in film could be adjustable by the target composition (e.g. (CoO)/(CoSi)). Taking these results into account, we tried low PAr deposition of Co–Si–O granular film. Under PAr = 0.6 Pa, oxygen-poor Co–Si–O granular film was obtained using a conventional (Co)+(SiO2) target, while by using a new type of sintered (Co)+(CoSi)+enriched(CoO) target, the oxygen composition in the granular film could be adjusted to be O/Si= 2 with grain isolated structure.
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