Abstract
This study focuses on the surface-activated bonding of sapphire (alpha-Al2O3) wafers at RT. In the surface activation process, Ar fast atom beam (FAB) irradiation is used as a physical sputtering method. The bond strength estimated by the crack opening method is approximately 1.63 J m−2. The binding state of the activated alpha-Al2O3 surface is determined using angle-resolved X-ray photoelectron spectroscopy. The results reveal the existence of two binding energies of Al2p (73.9 and 74.0 eV) on the surface of the FAB-irradiated wafer, indicating that the surface activation changes the binding state of the utmost alpha-Al2O3 surface. This implies that the contact of the changed Al2O3 surface contributes to the formation of a strong bond interface.
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