Abstract
We report the fabrication of high-density InAs quantum dots (QDs) grown on GaAs(1 0 0) substrate by metalorganic chemical-vapor deposition (MOCVD), obtained by antimony surfactant-mediated growth. We achieved InAs/Sb:GaAs QDs with dot density ranging from 2×10 10 cm to 2–11×10 11 cm −2, with complete suppression of coalescence. We studied the dependence of the total dot density and the density of coalesced dots on the growth conditions, such as antimony irradiation time, growth temperature and growth rate. Strongly enhanced PL intensity at room temperature (RT) was obtained from InAs/Sb:GaAs QDs with density above 4×10 10 cm −2, compared to reference InAs/GaAs QDs.
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