Abstract
In this paper we discuss the fabrication of high-density InAs quantum dots (QDs) on GaAs (1 0 0) substrates by molecular beam epitaxy, via antimony surfactant-mediated growth. The structural and optical properties of the QDs were studied as a function of the amount of antimony irradiation. It was found that with appropriate antimony irradiation, the dot density significantly increases while simultaneously restraining giant QDs. However, when the irradiation is beyond a certain amount, the dot density inversely decreases significantly. Moreover, temperature-dependent photoluminescence (T-PL) measurements reveal that antimony irradiation can cause a larger redshift of the PL peak wavelength at all temperatures, a faster decrease of integrated PL intensity below 100 K and a slower decrease of integrated PL intensity within 100–300 K as compared to measurements taken in the absence of antimony irradiation. It was also found that by increasing the amount of antimony irradiation, the samples' behavior is closer to that of conventional QDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
