Abstract
We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures ( Φ Sb). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorporated antimony content in InAs/GaAs QDs material. Anomalous asymmetric-band feature was observed in room temperature photoluminescence (RTPL) spectra of the investigated QD samples grown at relatively high temperature (490 °C). From the temperature-dependent PL measurements, it was found that the asymmetric-band feature is associated with the ground-states transitions from QDs with bimodal size distribution. The analysis of the pump power dependent PL spectra allows us to suggest a type II band lineup for the InAsSb/GaAs QDs materials system.
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