Abstract
The electrical and thermoelectrical performances of p-type (Bi 1− x Sb x ) 2Te 3 elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex substrate are discussed. The quality of the deposition layers is controlled by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Hall effect measurements are used to determine resistivity and holes mobility. It is found that the electrical properties of thin films depend strongly on growth parameters and exhibit a polycrystalline structure. The measurement of Seebeck coefficient ( S=235 μV/K) and the resistivity ( ρ=15 μΩ m) leads us to confirm the significant potential of the MOCVD method to produce a good material promising for thermoelectric application.
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