Abstract
Anodic aluminum oxide films, industrially produced by anodizing aluminum alloys under the galvanostatic mode at a relatively low temperature of 20°C (electrolyte bath temperature), present the reliable anticorrosive effect for numerous applications. For fabricating anodic aluminum oxide films with the promising corrosion resistance as well as high growth rate in a wide temperature range, the effect of anodizing temperatures on the structure and growth mechanism of anodic aluminum oxide films was investigated. As the temperature increases up to 30°C, the stress-driven breakdown of porous-type anodic aluminum oxide layers induced by their thinner pore walls was estimated. This phenomenon is interpreted by an increase of electronic current and thus a strong scour effect of O2 bubbles on the porous-type anodic aluminum oxide layers. Moreover, with the addition of composite organic acid into the sulfuric acid-based electrolyte solution, the anions (C6H5O73−,C4H4O62−) that incorporated into the anodic oxide contribute to lowering the electronic current and thus suppressing the formation of oxygen bubbles, resulting in a thicker barrier-type anodic aluminum oxide layer. This is assumed to be responsible for the enhanced corrosion resistance of anodic aluminum oxide films prepared at 30°C with 50 g/L organic acid addition.
Published Version
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