Abstract
The microstructure of Czochralski silicon (Cz–Si) co-implanted with H 2 + at E = 135 keV and He + at 75 keV to a total dose D H+He = 5 × 10 16 cm −2 (Si:H, He) and of reference Si:H prepared by H 2 + implantation to the same total dose ( E = 135 keV, D H = 5 × 10 16 cm −2), and annealed/treated at 723 and 923 K under hydrostatic argon pressure up to 1.1 GPa was investigated by X-ray high-resolution diffractometry and photoluminescence measurements. The treatment-induced effects depend both on the kind of implanted atoms (hydrogen + helium or hydrogen) and on the treatment parameters (temperature, pressure and treatment time). A qualitative explanation of the observed effects has been proposed.
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