Effect of annealing time on different properties of the next generation Cu2Ni0.50Co0.50SnS4Thin films

Abstract

In this report, the Multifunctional Quinary Cu2Ni0.50Co0.50SnS4 synthesized by a cheap and easy-to-use technique using spin-coating on glass substrates. XRD spectra of Cu2Ni0.50Co0.50SnS4 annealing at 300 °C demonstrated the structure similar to that of Cu2NiSnS4 and Cu2CoSnS4 for 60 min and 90 min. The Raman scattering demonstrated the existence of Raman Cu2Ni0.50Co0.50SnS4 peaks positioned at 286 and 331 cm−1 which allows us to tell the structure of Cu2Ni0.50Co0.50SnS4 similar only to Cu2NiSnS4. The EDS studies demonstrated a quasi-stoichiometry of the Cu2Ni0.50Co0.50SnS4 annealed sample with a low effect of annealing time on stoichiometry. The scanning electron microscope showed nearly uniform, dense and rough surface morphology with some voids. UV-visible-NIR spectroscopy revealed the gap energy of Cu2Ni0.50Co0.50SnS4 absorbent layers annealed at 300 °C for 60 min is 1.38 eV, which is very close to the optimal value of the solar spectrum signed by Shockley-Queisser. These results are ideally suited for low-cost, soil-abundant and non-toxic materials for photovoltaic applications.