Abstract
Thermal evaporation technique was used to prepare Cu13Se52Bi35 thin films. The asdeposited and annealed samples were investigated by using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmission and reflection. The XRD showed that the as-deposited film is crystalline in nature, and the crystalline size of samples increased with increasing the annealing temperature. SEM images showed that the morphology of the sample changes with the annealing temperature. The direct transition of the optical band gap (Eg) of Cu13Se52Bi35 films was observed and the values of Eg decreased with increasing the annealing temperature. Other optical parameters were also investigated.
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