Abstract
<TEX>$Bi_{3.25}La_{0.75}Ti_3O_{12}$</TEX>(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/<TEX>$SiO_2$</TEX>/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from <TEX>$600^{\circ}C$</TEX> to <TEX>$750^{\circ}C$</TEX> using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at <TEX>$700^{\circ}C$</TEX> was 10.92 <TEX>${\mu}C/cm^2$</TEX>. The fatigue characteristic of the BLT thin film annealed at <TEX>$700^{\circ}C$</TEX> was shown change polarization up to <TEX>$1.2{\times}10^9$</TEX> switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.
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