Abstract
We have investigated structural and optical properties of gallium oxide (Ga2O3) thin films deposited on pre-cleaned fused quartz substrates at room temperature by RF sputtering method. The as-prepared and annealed Ga2O3 thin films are characterized by X-ray diffraction, energy dispersive X-ray fluorescence, fluorescence spectrometer and a double beam spectrophotometer. The variations in optical parameters of Ga2O3 thin films before and after annealing are reported. The optical parameters such as optical band gap, photoluminescence emission peaks, refractive index, single oscillator energy, plasma frequency and dispersion energy are determined before and after annealing. The probable image on the microstructure and optical features of Ga2O3 thin films before and after annealing is constructed.
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