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Abstract
The effect of the annealing process on properties of Pb(Zr0.48Ti0.52)O3 (PZT) thin films prepared by sol-gel method was systematically studied. PZT film deposited by the single layer pre-crystallization processing followed by multilayer crystallization processing is easy to grow along (110) orientation. The PZT films were prepared by the single layer annealing process and show (100) preferred orientation at lower crystallization temperature, while (111) and (110) orientation growth is occurs easily in higher the crystallization temperature. The PZT films deposited at higher crystallization temperature have larger average grain, but the high temperature cause the volatilization of lead, film density to decrease.
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