Abstract
Ga2O3 films were deposited on gadolinium gallium garnet (Gd3Ga5O12, or GGG)(110) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures. The structural analyses showed that the film annealed at 900℃ was pure β-Ga2O3 have the best crystalline quality. A clear epitaxial relationship of β-Ga2O3(100)‖GGG(110) with β-Ga2O3[010]‖GGG[001¯] was determined and a schematic diagram was proposed to clarify the growth mechanism for the 900℃-annealed sample. The average transmittance of the sample annealed at 900℃ was 84% in the visible wavelength region. A broad ultraviolet-green photoluminescence (PL) band ranged from 330 to 520nm was observed, for which the PL mechanism was discussed and clarified.
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