Abstract
This study looks at the results of Resistive random-access memory (ReRAM) devices made by using structural layers of Gold (Au)/Zinc oxide (ZnO)/Indium tin oxide (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, the resistance ratio was found to be 102 at 1 V. The device’s switching properties improved after annealing. Rutherford Backscattering Spectrometry (RBS) determine the thickness of the deposited zinc oxide layer, which was found to be approximately 140 ± 10 nm. The zinc atomic fractions were calculated to be 60 % and oxygen 40 % by the SIMNRA simulation. The ZnO-based structures were also characterized and analysed using (XRD) X-ray powder diffraction, (SEM) Scanning electron microscope, (AFM) Atomic force microscopy and (XPS) X-ray photoelectron spectroscopy. The current study reveals that annealing improves the performance of RRAM devices.
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