Abstract
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
Highlights
Owing to its extreme scalability, efficient power consumption, simple metal-active material–metal structure, and fast writing speed, resistive random access memory (RRAM) is considered a promising candidate for next-generation nonvolatile memory
One solution involves the development of a one-transistor–one-RRAM unit structure [15,16]
We investigated the influence of the UV/ozone-assisted photochemical annealing process on the structural, chemical, optical, and electrical properties of Y2O3
Summary
Owing to its extreme scalability, efficient power consumption, simple metal-active material–metal structure, and fast writing speed, resistive random access memory (RRAM) is considered a promising candidate for next-generation nonvolatile memory. The aforementioned attributes render RRAMs a solution to overcome the von Neumann bottleneck, allowing for the realization of a neuromorphic computing system that imitates the human brain [1–3] For this imitation, memory devices with high density, high performance, and low-power operation are required. Conventional vacuum-based deposition methods have been used for depositing metal oxides, which is expensive and time-consuming [18–21] These drawbacks have boosted the development of alternative deposition techniques, such as spin coating, sol-gel, and printing techniques, using solutionphase precursors [17,22–24]. A liquid-phase precursor solution enables large-area applications, such as in inks for spin coating, dip coating, and printing techniques These processes do not require expensive conventional vacuum-based deposition tools, thereby facilitating the low-cost fabrication of pure metal–oxide layers. For RRAM devices, sol-gel-processed Y2O3 active channel layers were successfully synthesized on plastic substrates without a thermal annealing process. The proposed fabrication process of amorphous-phase Y2O3-based RRAM devices provides a reference for the future application of flexible RRAM– based devices, such as wearable computers and soft robotics [28]
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