Abstract
Ba 0.96 Ca 0.04 Ti 0.84 Zr 0.16 O 3 (BCTZ) and Ba0.5Sr0.5TiO3 (BST) thin films were deposited at a substrate temperature of 450°C via rf magnetron sputtering to form Pt∕BCTZ∕Pt and Pt∕BST∕Pt capacitors. BCTZ thin films hold promise as an alternative to BST in capacitor applications due to the resistance of BCTZ to reducing atmospheres. In order to produce BST films with low dc leakage current, oxygen is routinely used during film growth and often afterwards during anneals. The effect of postannealing the capacitors in either forming gas or oxygen at temperatures up to 700°C (BST) and 800°C (BCTZ) were studied. The leakage mechanism is shown to be dominated by Schottky emission and the Schottky barrier height is reported as a function of anneal gas composition and anneal temperature.
Published Version
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