Abstract
HfOxNy–HfO2–HfOxNy sandwich-stack (SS) film was investigated in comparison with HfO2 film of the same thickness. Higher thermal stability and better surface morphology can be observed for the SS film. This structure also shows stronger immunity to interfacial oxidation compared with HfO2 film. Meanwhile, unlike the HfOxNy dielectric, the capacitance performance of SS film was not worse (but was even better) than a pure HfO2 film of the same thickness. The SS structure appears to be a promising high-k gate dielectric compared with both pure HfOxNy and HfO2 dielectrics for future ULSI devices. Additionally, PDA treatment plays an important role in improving the characteristics of SS film, which is confirmed by effective channel electron mobility and stress induced leakage current (SILC) investigations.
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