Abstract
Ruthenium dioxide thin films were deposited on SiO2/Si substrate at low temperatures by hot-wall metalorganic chemical vapor deposition using the ruthenocene and oxygen gas mixtures. The RuO2 films annealed at 700°C in 1 atm. oxygen ambient showed a dense and improved microstructure. However, above 750°C evaporation of RuO2 was observed at the interface between RuO2 and SiO2/Si substrates as well as the surface of RuO2 films. RuO2 annealed at vacuum ambient(about 1.0 × 10−5 torr) of 500°C were partially reduced to Ru and completely Ru at 700°C. Films annealed at vacuum ambient showed the most low resistivity because RuO2 was reduced to the Ru metal with increasing annealing temperatures. Films annealed in oxygen atmosphere of 600°C after vacuum annealing showed an uniform RuOx grain size but a little porous structure.
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