Abstract
The influence of the atmosphere of CVD-ZnSe annealing carried out in modes close to the procedure of their doping with iron on the luminescent characteristics of these crystals is investigated. It was found that annealing in the atmosphere of argon and selenium leads to a qualitative change in the impurity-defect composition and to a complex spatial distribution of the luminescent characteristics of CVD-ZnSe, especially in the crystal region at a distance of up to 400 microns from the surface. In the case of annealing in zinc, the luminescent characteristics are more uniform, with the exception of the near-surface zone with a width of about 100 microns, which has a high luminescence intensity in the entire spectral range under study (0.44-0.72 microns). The obtained results are interpreted on the basis of the assumption about the evaporation of zinc during annealing in argon and selenium. Based on the analysis of the spatial distribution of luminescence, assumptions are made about the nature of the observed impurity-defect centers. Keywords: two-photon confocal microscopy, CVD-ZnSe, impurity-defect composition, high temperature annealing.
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