Abstract
Edge and defective-impurity luminescence in polycrystalline CVD ZnSe has been studied in the range 0.46–0.73 μm by two-photon confocal microscopy. We have obtained luminescence intensity distribution maps for undoped, iron-doped, and chromium-doped ZnSe samples at depths of up to 1 mm with a spatial resolution of a few microns. It has been shown that crystal regions with low dopant concentrations contain centers that luminesce in the ranges 520–580 and >670 nm. The parts of the crystals with high iron and chromium concentrations contain centers that suppress the edge and defective-impurity (520–580 nm) luminescence. We discuss the nature of these centers and demonstrate the possibility of assessing the luminescence characteristics of grain boundaries in CVD ZnSe.
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