Effect of annealing ambient gases on the bias stability of amorphous SnSiO thin-film transistors

Abstract

The effect of different annealing ambient gases on the initial electrical properties and bias stability of amorphous tin silicon oxide (a-SnSiO) thin-film transistors (TFTs) is examined in this study. At an annealing temperature of 350 °C, the SnSiO film remained amorphous with excellent transmittance regardless of the annealing environment. The presence of oxygen during annealing (such as in air and O2) could reduce the mobility of the TFTs and create more oxygen-related defect states, thereby reducing the bias stability. In contrast, nitrogen-annealed TFTs showed maximum mobility and optimal bias stability. The corresponding mobility reached 8.6 cm2V−1s−1, the threshold voltage was 0.2 V and the subthreshold swing value was 0.7 V dec−1.