Abstract
We studied details of the anisotropic spatial fluctuation in In compositions numerically as described by an early stage in the time evolution of InGaN phase separation using the cell dynamical system (CDS) approach. We extended the previous isotropic CDS approach to the anisotropic case of current of the order parameter corresponding to the two-dimensional anisotropic diffusion of the constituents. The results of this numerical-based work indicate that the anisotropic current of the order parameter, which consists of a reduction of the current in one direction and a nonreduction in the opposite direction, suppresses the In compositional fluctuation. This suppression arises from the unidirectional current of the order parameter, which relates to the enhancement of anisotropic diffusion of the constituents. Thus we substantiate the homogeneous growth of the InGaN film by using the surface of an off-axis substrate consisting of uniformly spaced steps with high density.
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