Abstract
We performed a numerical study of the two-dimensional pattern formation of InGaN driven by a phase separation using the cell dynamical system (CDS) approach to reveal the detailed nature of a self-assembled InGaN dot-like structure showing characteristic optical properties. We calculated two-dimensional pattern formations under various conditions. First, over a wide In compositional range (0<In<0.6), a dot-like structure appears arising from a phase separation as well as due to the effects of strains and defects. These results are consistent with those in the case of experimentally observed structures reported earlier. Thus, we can conclude that in the present study, the pattern formation by a phase separation affects the emission mechanism of InGaN-based semiconductor light-emitting device because of a compositional fluctuation of In. Second, the calculated results suggest that the pattern formations depend on the experimental parameters, such as growth temperature, the average and local fluctuation of In composition, the lattice mismatch of InGaN and GaN, and defects.
Published Version
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