Abstract
External-quantum-efficiency (EQE) and efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes have been investigated. It was found that the insertion of an AlGaN barrier between the n-type GaN layer and the InGaN well resulted in higher peak EQE and reduced efficiency droop at a higher injection level. EQE was improved by 5.7% and 25.8% over that of a sample without an AlGaN barrier at a current density of 104.3 A/cm2 and 521 A/cm2, respectively. It is suggested that the mechanism is attributed to an electron decelerating effect that enlarges the effective active region.
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