Abstract
The stability of pure tantalum is not high enough for high precision resistors. The stability of alloyed tantalum (TaAl) or Ta compound (TaN) films are suitable, but their temperature coefficients are relatively high. Experiments were made to prepare TaTi alloys for improving the TCR value and at the same time keeping the excellent stability. The determination of characteristic data of thermal stability from in situ measurements were carried out with computer control. A calculation method was developed to determine the parabolic rate coefficient of oxidation, the activation energy and the probable formal kinetic relationship fromt, T andR □ data.
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