Abstract
InGaN/AlGaN ultraviolet light-emitting diodes (UV LEDs) with AlGaN barriers having various Si doping concentrations are grown by metal–organic chemical vapor deposition. The light output power of UV LEDs was obviously improved as a result of Si doping of the AlGaN barriers. Detail analysis of this improvement by simulation modeling showed that the increase in Si doping concentration in AlGaN barrier is beneficial for increasing electron injection efficiency and simultaneously the radiative recombination distribution.
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