Abstract
The effect of AlGaN interlayer (IL) in bottom quantum barriers on efficiency enhancement of the InGaN green light-emitting diodes (LEDs) on patterned silicon substrate has been investigated. Significantly, the LEDs with AlGaN IL show high emission efficiency at low current and the maximum wall-plug efficiency is 58% at 7.5 mA (17 mW). This is attributed to the effect of AlGaN IL on carrier distribution and screening dislocations due to its higher bandgap, based on LEDs structure with V-shaped pits. Consequently the ameliorated properties of LEDs with AlGaN IL provide a good choice for LEDs operating at low current density.
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