Abstract
The Al–Zr–ZnO films was deposited on the surface of n-Si (111) by sol-gel method. The results showed that the average grain size of Al–Zr–ZnO films decreases due to ion doping concentration. Based on XPS analysis, the surface defect oxygen of Al–Zr–ZnO films decreases. As for grapheme/Al–Zr–ZnO Schottky contact, barrier height increased and ideality factor decreased with the increasing of Al ion or Zr ion doping, indicating that the rectifying characteristics of graphene/Al–Zr–ZnO Schottky contacts was enhanced due to ion co-doping. It can be explained that oxygen vacancies of Al–Zr–ZnO films decreases due to the ion doping and weakens Fermi level pinning.
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