Abstract
This paper assesses the difficulties associated with Al incorporation in nonpolar m-plane GaN/AlGaN multi-quantum-wells grown on free-standing m-plane GaN. Structures with average Al mole fraction below 6% show atomically flat surfaces and no extended structural defects, in spite of alloy fluctuations up to 30% of the average concentration. Increasing the average Al composition of the alloy above 23% induces anisotropic degradation of the surface morphology, with appearance of elongated features which increase the surface roughness, along with formation of stacking faults, dislocations, and nm-sized Al-rich clusters. The effect of all these structural features on the MQWs optical performance is discussed.
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