Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice

Abstract

The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga1−xAlxAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.