Abstract
The effect of interdiffusion of Al and Ga atoms on the binding energy of the hydrogen-like shallow donor impurity in spherically symmetric GaAs/Ga 1− x Al x As quantum dot is investigated. The dependence of the binding energy on the diffusion length, as well as on dot radius and impurity position are obtained. It is shown that the dependence of the binding energy on the diffusion length has non-monotonic behavior in both the cases of on- and off-center impurity and can be significantly different for varied values of the dot radius and the distance of impurity from the dot center.
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