Abstract
In the present work, an attempt is made to derive expressions for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on small-gap semiconductors under both weak and strong electric field limits in the presence of a quantizing magnetic field. It is found, taking n-channel layers on p-type InSb as examples, that the ratios show spiky oscillations with charging magnetic field, the periods of oscillations being independent of the degree of band non-parabolicity.
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